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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D302
PBSS4350D NPN transistor
Product specification 2000 Mar 08
Philips Semiconductors
Product specification
NPN transistor
FEATURES * High current capabilities * Low VCEsat. APPLICATIONS * Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers * VCEsat critical applications such as the latest low supply voltage IC applications * All battery driven equipment to save battery power.
handbook, halfpage
PBSS4350D
PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION
6
5
4 1, 2, 5, 6
DESCRIPTION NPN low VCEsat transistor in a SC-74 plastic package. PNP complement: PBSS5350D.
1 2 3
MAM436
3 4 Top view
MARKING CODE TYPE NUMBER PBSS4350D MARKING CODE 43 Fig.1
Simplified outline (SOT457) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tamb = 25 C note 1 note 2 Tstg Tj Tamb Notes 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. storage temperature junction temperature ambient temperature - - -65 - -65 600 750 +150 150 +150 mW mW C C C CONDITIONS open emitter open base open collector MIN. - - - - - - MAX. 60 50 6 3 5 1 UNIT V V V A A A
2000 Mar 08
2
Philips Semiconductors
Product specification
NPN transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS note 1 note 2 Notes
PBSS4350D
VALUE 208 160
UNIT K/W K/W
thermal resistance from junction to ambient in free air;
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 50 V IE = 0; VCB = 50 V; Tj = 150 C IC = 0; VEB = 5 V VCE = 2 V; IC = 500 mA IC = 1 A; note 1 IC = 2 A; note 1 VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA IC = 1 A; IB = 50 mA IC = 2 A; IB = 200 mA; note 1 VBEsat VBEon Cc fT Note 1. Pulse test tp 300 s, 0.02. base-emitter saturation voltage base-emitter turn-on voltage collector capacitance transition frequency IC = 2 A; IB = 200 mA; note 1 IC = 1 A; VCE = 2 V; note 1 IE = Ie = 0; VCB = 10 V; f = 1 MHz IC = 100 mA; VCE = 5 V; f = 100 MHz 200 200 100 - - - - - - 100 - - - 90 170 290 1.2 1.1 30 - mV mV mV V V pF MHz MIN. - - - MAX. 100 50 100 UNIT nA A nA
2000 Mar 08
3
Philips Semiconductors
Product specification
NPN transistor
PBSS4350D
handbook, halfpage
600
MCD915
handbook, halfpage
1.2
MCD916
hFE
(1)
VBE (V)
(1)
400
(2)
0.8
(2)
(3)
200
(3)
0.4
0 10-1
1
10
102
103 104 IC (mA)
0 10-1
1
10
102
103 104 IC (mA)
VCE = 2 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
VCE = 2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.2
DC current gain as a function of collector current.
Fig.3
Base-emitter voltage as a function of collector current.
MCD917
handbook, halfpage
1
handbook, halfpage
1.5
MCD918
VCEsat (V) 10-1
(1) (2) (3)
VBEsat (V) 1
(1) (2)
10-2
0.5
(3)
10-3 10-1
1
10
102
103 104 IC (mA)
0 10-1
1
10
102
103 104 IC (mA)
IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.4
Collector-emitter saturation voltage as a function of collector current.
Fig.5
Base-emitter saturation voltage as a function of collector current.
2000 Mar 08
4
Philips Semiconductors
Product specification
NPN transistor
PBSS4350D
handbook, halfpage
1.2
MCD919
handbook, halfpage
(1) (2) (3) (4)
5
MCD920
IC (A) 0.8
IC (A)
(1) (2) (3) (4) (5) (6) (7) (8) (9)
4
(5) (6) (7) (8)
3
2
(10)
0.4
(9) (10) (11) (12)
1
0 0 0.5 1 1.5 VCE (V) 2
0 0 0.5 1 1.5 VCE (V) 2
Tamb = 25 C. (1) IB = 3.96 mA. (2) IB = 3.63 mA. (3) IB = 3.3 mA. (4) IB = 2.97 mA. (5) IB = 2.64 mA. (6) IB = 2.31 mA. (7) IB = 1.98 mA. (8) IB = 1.65 mA. (9) IB = 1.32 mA. (10) IB = 990 A. (11) IB = 660 A. (12) IB = 330 A. Tamb = 25 C. (1) (2) (3) (4) (5) IB = 150 mA. IB = 135 mA. IB = 120 mA. IB = 105 mA. IB = 90 mA. (6) IB = 75 mA. (7) IB = 60 mA. (8) IB = 45 mA. (9) IB = 30 mA. (10) IB = 15 mA.
Fig.6
Collector current as a function of base current and collector-emitter voltage.
Fig.7
Collector current as a function of base current and collector-emitter voltage.
2000 Mar 08
5
Philips Semiconductors
Product specification
NPN transistor
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
PBSS4350D
SOT457
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A
A1
1
e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT457
REFERENCES IEC JEDEC EIAJ SC-74
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2000 Mar 08
6
Philips Semiconductors
Product specification
NPN transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
PBSS4350D
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
2000 Mar 08
7
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000
Internet: http://www.semiconductors.philips.com
SCA 69
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
603506/01/pp8
Date of release: 2000
Mar 08
Document order number:
9397 750 06734

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